IPDiA, CEA-Leti Achieve New Capacitance Milestone

April 24, 2012 – 8:57 am

French research and technology organisation CEA-Leti and Caen-based company IPDiA have announced the successful development of a new process based on the deposition of atomic medium-K dielectric layers within the aggressive architecture of IPDiA’s 3-D metal-insulator-metal capacitors. Atomic layer deposition (ALD) is a key process technology that enables conformal coating of high aspect ratio surfaces and precise thickness control on the atomic level. The research partners have achieved a capacitance density of 550 nF/mm2 by maintaining the same leakage current and parasitic levels found in the 250 nF/mm2 PICS3 product. The research and development work is performed under the auspices of the Platform for the Realization of shared Industrial Innovation (PRIIM) subsidised by French public-sector funding entity Oseo.

To increase capacitor surface, and thus capacitance, without also increasing the component’s footprint, CEA-Leti and IPDiA act on the third dimension of the high-density capacitors, which are based on Passive Integrated Connective Substrate (PICS) technology. PICS-based devices demonstrate inherent good performance with very high stability (temperature, voltage and ageing), reliability and minimal parasitic elements, according to a press release distributed by IPDiA. These properties combined with advances in capacitance density make the device interesting for manufacturers of medical systems and other high-reliability applications.

To learn more about IPDiA’s technology, read Building Smaller, More Reliable Medical Electronic Devices authored by CEO Frank Murray on emdt.co.uk.

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  2. May 3, 2012: IPDiA and CEA-Leti Announce New Capacitance Density Target (1uF/mm2)

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